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Ion Beam Assisted Deposition - IBAD
IBAD is a combined process in which a film formed on a substrate is bombarded simultaneously with a directed beam of energetic ions. Ion energy, angle and ion-to-atom arrival rate ratio can be precisely controlled. Energetic ions can be used to modify film density, stress, texture, grain size, structure of the interface and other related properties. In so called reactive IBAD, dense films of TiN, AlN, ZrO₂, and Al₂O₃ with improved stoichiometry can be synthesized for tribological, corrosion and optical applications.	IBAD Ion type: inert, nitrogen, oxygen mix Ion energy range: 100-1200 eV Ion current range: 100 mA Electron beam guns: 10 and 15 cc capacity Deposition rate: 2.0 nm/s Target chamber vacuum: 10 ^-10 Torr Sample manipulation: tilt, rotate Sample temperature control: -196°C to 1000°C Deposition area: 10 cm ²

Ion Beam Assisted Deposition - IBAD

IBAD is a combined process in which a film formed on a substrate is bombarded simultaneously with a directed beam of energetic ions. Ion energy, angle and ion-to-atom arrival rate ratio can be precisely controlled. Energetic ions can be used to modify film density, stress, texture, grain size, structure of the interface and other related properties.

In so called reactive IBAD, dense films of TiN, AlN, ZrO₂, and Al₂O₃ with improved stoichiometry can be synthesized for tribological, corrosion and optical applications.

IBAD

Ion type: inert, nitrogen, oxygen mix
Ion energy range: 100-1200 eV
Ion current range: 100 mA
Electron beam guns: 10 and 15 cc capacity
Deposition rate: 2.0 nm/s
Target chamber vacuum: 10 ^-10 Torr
Sample manipulation: tilt, rotate
Sample temperature control: -196°C to 1000°C
Deposition area: 10 cm ²

| Last Modified 07/07/06 |