Ion Beam Assisted Deposition System (IBAD)
IBAD is a combined process in which a film formed on a substrate is bombarded simultaneously with a directed beam of energetic ions. Ion energy, angle and ion-to-atom arrival rate ratio can be precisely controlled. Energetic ions can be used to modify film density, stress, texture, grain size, structure of the interface and other related properties.In so called reactive IBAD, dense films of TiN, AlN, ZrO2, and Al2O3 with improved stoichiometry can be synthesized for tribological, corrosion and optical applications.
Capabilities
- Ion type: inert, nitrogen, oxygen mix
- Ion energy range: 100-1200 eV
- Ion current range: 100 mA
- Electron beam guns: 10 and 15 cc capacity
- Deposition rate: 2.0 nm/s
- Target chamber vacuum: 10 -10 Torr
- Sample manipulation: tilt, rotate
- Sample temperature control: -196°C to 1000°C
- Deposition area: 10 cm 2
Examples of deposited materials:
Au Ni Nb Al Ti,
Al2O3, TiO2, SiO2